DIODES DMP6050SPS-13

Manufacturer No:

DMP6050SPS-13

Manufacturer:

DIODES

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 50m ? @ 5A, 10V ±20V 2.163nF @ 30V 30nC @ 10V 60V 8-PowerTDFN

Quantity:

Delivery:

Payment:

In Stock :Available

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DMP6050SPS-13 information

DIODES DMP6050SPS-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMP6050SPS-13.

Type
Parameter

Factory Lead Time
17 Weeks

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2018

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
FLAT

Peak Reflow Temperature (Cel)
260

Reach Compliance Code
not_compliant

Time@Peak Reflow Temperature-Max (s)
30

JESD-30 Code
R-PDSO-F5

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.3W

Case Connection
DRAIN

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
50m ? @ 5A, 10V

Vgs(th) (Max) @ Id
3V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
2.163nF @ 30V

Current - Continuous Drain (Id) @ 25°C
5.7A Ta

Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V

Drain to Source Voltage (Vdss)
60V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Drain Current-Max (Abs) (ID)
5.7A

Drain-source On Resistance-Max
0.05Ohm

Pulsed Drain Current-Max (IDM)
45A

DS Breakdown Voltage-Min
60V

Avalanche Energy Rating (Eas)
32 mJ

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for DIODES DMP6050SPS-13.

PCN Assembly/Origin:

diodesincorporated-sbrt5a50sa13-pcnassemblyorigin-4761.pdf

DMP6050SPS-13 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 32 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.163nF @ 30V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5.7A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 45A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

DMP6050SPS-13 Features

the avalanche energy rating (Eas) is 32 mJ
based on its rated peak drain current 45A.
a 60V drain to source voltage (Vdss)

DMP6050SPS-13 Applications

There are a lot of Diodes Incorporated
DMP6050SPS-13 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.