

Diodes DMP56D0UFB-7
Manufacturer No:
DMP56D0UFB-7
Manufacturer:
Package:
3-UFDFN
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 6 ? @ 100mA, 4V ±8V 50.54pF @ 25V 0.58nC @ 4V 50V 3-UFDFN
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DMP56D0UFB-7 information
Diodes DMP56D0UFB-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes DMP56D0UFB-7.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-UFDFN
- Number of Pins
- 3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- JESD-609 Code
- e4
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Terminal Finish
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 425mW Ta
- Element Configuration
- Single
- Turn On Delay Time
- 4.46 ns
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 6 ? @ 100mA, 4V
- Vgs(th) (Max) @ Id
- 1.2V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 50.54pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 200mA Ta
- Gate Charge (Qg) (Max) @ Vgs
- 0.58nC @ 4V
- Drain to Source Voltage (Vdss)
- 50V
- Drive Voltage (Max Rds On,Min Rds On)
- 2.5V 4V
- Vgs (Max)
- ±8V
- Fall Time (Typ)
- 15 ns
- Turn-Off Delay Time
- 21.9 ns
- Continuous Drain Current (ID)
- 200mA
- Gate to Source Voltage (Vgs)
- 8V
- Drain Current-Max (Abs) (ID)
- 0.2A
- Height
- 480?m
- Length
- 1.08mm
- Width
- 675?m
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for Diodes DMP56D0UFB-7.
Environmental Information:
DMP56D0UFB-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50.54pF @ 25V.This device conducts a continuous drain current (ID) of 200mA, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 0.2A.When the device is turned off, a turn-off delay time of 21.9 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.46 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 50V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4V volts (2.5V 4V).
DMP56D0UFB-7 Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 21.9 ns
a 50V drain to source voltage (Vdss)
DMP56D0UFB-7 Applications
There are a lot of Diodes Incorporated
DMP56D0UFB-7 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
User Guide
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