DIODES DMP2008USS-13

Manufacturer No:

DMP2008USS-13

Manufacturer:

DIODES

Package:

8-SOIC (0.154", 3.90mm Width)

Description:

MOSFET (Metal Oxide) P-Channel 9mOhm @12A, 4.5V ±8V 6820 pF @ 10 V 159 nC @ 10 V 20 V 8-SOIC (0.154", 3.90mm Width)

Quantity:

In Stock :9633

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DMP2008USS-13 Information

DIODES DMP2008USS-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMP2008USS-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154", 3.90mm Width)

Supplier Device Package
8-SO

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V

Power Dissipation (Max)
1.4W (Ta)

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
9mOhm @12A, 4.5V

Vgs(th) (Max) @ Id
1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
6820 pF @ 10 V

Current - Continuous Drain (Id) @ 25°C
13A (Ta), 38A (Tc)

Gate Charge (Qg) (Max) @ Vgs
159 nC @ 10 V

Drain to Source Voltage (Vdss)
20 V

Vgs (Max)
±8V

Download datasheets and manufacturer documentation for DIODES DMP2008USS-13.

DMP2008USS-13 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6820 pF @ 10 V maximal input capacitance.To operate this transistor, you will need a 20 V drain to source voltage (Vdss).