DIODES DMN53D0LW-7
Manufacturer No:
DMN53D0LW-7
Manufacturer:
DIODES
Package:
SC-70, SOT-323
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2 ? @ 270mA, 10V ±20V 45.8pF @ 25V 1.2nC @ 10V SC-70, SOT-323
Quantity:
In Stock :2843
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMN53D0LW-7 Information
DIODES DMN53D0LW-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN53D0LW-7.
- Type
- Parameter
- Factory Lead Time
- 17 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Number of Pins
- 3
- Weight
- 7.994566mg
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Number of Channels
- 1
- Power Dissipation-Max
- 320mW Ta
- Element Configuration
- Single
- Turn On Delay Time
- 2.7 ns
- FET Type
- N-Channel
Download datasheets and manufacturer documentation for DIODES DMN53D0LW-7.
Environmental Information:
DMN53D0LW-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 45.8pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 360mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 50V, and this device has a drainage-to-source breakdown voltage of 50VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18.9 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
DMN53D0LW-7 Features
a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 18.9 ns
DMN53D0LW-7 Applications
There are a lot of Diodes Incorporated
DMN53D0LW-7 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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