DIODES DMN4060SVT-7
Manufacturer No:
DMN4060SVT-7
Manufacturer:
DIODES
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 46m ? @ 4.3A, 10V ±20V 1287pF @ 25V 22.4nC @ 10V 45V SOT-23-6 Thin, TSOT-23-6
Quantity:
In Stock :8605
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMN4060SVT-7 Information
DIODES DMN4060SVT-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN4060SVT-7.
- Type
- Parameter
- Factory Lead Time
- 17 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Published
- 2012
- Packaging
- Tape & Reel (TR)
- Operating Temperature
- -55°C~150°C TJ
- Type
- Parameter
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Additional Feature
- HIGH RELIABILITY
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
Download datasheets and manufacturer documentation for DIODES DMN4060SVT-7.
Environmental Information:
DMN4060SVT-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1287pF @ 25V.This device conducts a continuous drain current (ID) of 4.8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 20.1 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 45V.This transistor requires a drain-source voltage (Vdss) of 45V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMN4060SVT-7 Features
a continuous drain current (ID) of 4.8A
the turn-off delay time is 20.1 ns
a 45V drain to source voltage (Vdss)
DMN4060SVT-7 Applications
There are a lot of Diodes Incorporated
DMN4060SVT-7 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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