DIODES DMN3069L-7

Manufacturer No:

DMN3069L-7

Manufacturer:

DIODES

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) N-Channel 30mOhm @ 4A, 10V ±20V 309 pF @ 15 V 8.1 nC @ 10 V 30 V TO-236-3, SC-59, SOT-23-3

Quantity:

In Stock :3565

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Shipped from：HK Warehouse

Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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PURCHASE

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMN3069L-7 Information

DIODES DMN3069L-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN3069L-7.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Supplier Device Package
SOT-23-3

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
800mW

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
30mOhm @ 4A, 10V

Vgs(th) (Max) @ Id
1.8V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
309 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C
5.3A (Ta)

Gate Charge (Qg) (Max) @ Vgs
8.1 nC @ 10 V

Drain to Source Voltage (Vdss)
30 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMN3069L-7.

DMN3069L-7 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 309 pF @ 15 V.This transistor requires a drain-source voltage (Vdss) of 30 V.