DIODES DMN2310UT-13

Manufacturer No:

DMN2310UT-13

Manufacturer:

DIODES

Package:

SOT-523

Description:

MOSFET (Metal Oxide) N-Channel 240mOhm @ 300mA, 4.5V ±8V 38 pF @ 10 V 0.7 nC @ 4.5 V 20 V SOT-523

Quantity:

In Stock :2409

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Shipped from：HK Warehouse

Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMN2310UT-13 Information

DIODES DMN2310UT-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN2310UT-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
SOT-523

Supplier Device Package
SOT-523

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V

Power Dissipation (Max)
290mW (Ta)

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
240mOhm @ 300mA, 4.5V

Vgs(th) (Max) @ Id
950mV @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
38 pF @ 10 V

Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)

Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V

Drain to Source Voltage (Vdss)
20 V

Vgs (Max)
±8V

Download datasheets and manufacturer documentation for DIODES DMN2310UT-13.

DMN2310UT-13 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 38 pF @ 10 V.This transistor requires a drain-source voltage (Vdss) of 20 V.