DIODES DMN2310U-13

Manufacturer No:

DMN2310U-13

Manufacturer:

DIODES

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) N-Channel 175mOhm @ 300mA, 4.5V ±8V 38 pF @ 10 V 0.7 nC @ 4.5 V 20 V TO-236-3, SC-59, SOT-23-3

Quantity:

In Stock :9026

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Shipped from：HK Warehouse

Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMN2310U-13 Information

DIODES DMN2310U-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN2310U-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Supplier Device Package
SOT-23-3

Mfr
Diodes Incorporated

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V

Power Dissipation (Max)
480mW (Ta)

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Type
Parameter

Rds On (Max) @ Id, Vgs
175mOhm @ 300mA, 4.5V

Vgs(th) (Max) @ Id
950mV @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
38 pF @ 10 V

Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)

Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V

Drain to Source Voltage (Vdss)
20 V

Vgs (Max)
±8V

Download datasheets and manufacturer documentation for DIODES DMN2310U-13.

DMN2310U-13 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 38 pF @ 10 V.This transistor requires a drain-source voltage (Vdss) of 20 V.