DIODES DMN14M8UFDF-13

Manufacturer No:

DMN14M8UFDF-13

Manufacturer:

DIODES

Package:

6-UDFN Exposed Pad

Description:

MOSFET (Metal Oxide) N-Channel 6mOhm @ 12A, 4.5V ±8V 1246 pF @ 6 V 29.5 nC @ 10 V 12 V 6-UDFN Exposed Pad

Quantity:

In Stock :2952

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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MEANS OF PAYMENT

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMN14M8UFDF-13 Information

DIODES DMN14M8UFDF-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN14M8UFDF-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
6-UDFN Exposed Pad

Supplier Device Package
U-DFN2020-6 (Type F)

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V

Power Dissipation (Max)
1.1W (Ta)

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
6mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id
1.2V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1246 pF @ 6 V

Current - Continuous Drain (Id) @ 25°C
14.7A (Ta)

Gate Charge (Qg) (Max) @ Vgs
29.5 nC @ 10 V

Drain to Source Voltage (Vdss)
12 V

Vgs (Max)
±8V

Download datasheets and manufacturer documentation for DIODES DMN14M8UFDF-13.

DMN14M8UFDF-13 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1246 pF @ 6 V.Operating this transistor requires a 12 V drain to source voltage (Vdss).