

DIODES DMN1008UFDF-7
Manufacturer No:
DMN1008UFDF-7
Manufacturer:
Package:
6-UDFN Exposed Pad
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8m ? @ 5A, 4.5V ±8V 995pF @ 6V 23.4nC @ 8V 12V 6-UDFN Exposed Pad
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DMN1008UFDF-7 information
DIODES DMN1008UFDF-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN1008UFDF-7.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101
- JESD-609 Code
- e4
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Terminal Finish
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- NO LEAD
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- S-PDSO-N6
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 700mW Ta
- Operating Mode
- ENHANCEMENT MODE
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 8m ? @ 5A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 995pF @ 6V
- Current - Continuous Drain (Id) @ 25°C
- 12.2A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 23.4nC @ 8V
- Drain to Source Voltage (Vdss)
- 12V
- Drive Voltage (Max Rds On,Min Rds On)
- 2.5V 4.5V
- Vgs (Max)
- ±8V
- Drain Current-Max (Abs) (ID)
- 12.2A
- Drain-source On Resistance-Max
- 0.0125Ohm
- DS Breakdown Voltage-Min
- 12V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for DIODES DMN1008UFDF-7.
Environmental Information:
PCN Assembly/Origin:
DMN1008UFDF-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 995pF @ 6V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.2A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 12V in order to maintain normal operation.Operating this transistor requires a 12V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
DMN1008UFDF-7 Features
a 12V drain to source voltage (Vdss)
DMN1008UFDF-7 Applications
There are a lot of Diodes Incorporated
DMN1008UFDF-7 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
User Guide
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2:Desiccant Protection

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Step4:Individual Package

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Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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