Harris D64ES5

Manufacturer No:

D64ES5

Manufacturer:

Harris

Package:

TO-204AA, TO-3

Description:

NPN - Darlington -65°C ~ 150°C (TJ) 1mA TO-204AA, TO-3 Through Hole

Quantity:

Delivery:

Payment:

In Stock :Available

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D64ES5 information

Harris D64ES5 technical specifications, attributes, parameters and parts with similar specifications to Harris D64ES5.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-204AA, TO-3

Supplier Device Package
TO-3

Mfr
Harris Corporation

Package
Bulk

Product Status
Active

Operating Temperature
-65°C ~ 150°C (TJ)

Power - Max
125 W

Transistor Type
NPN - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10A, 5V

Current - Collector Cutoff (Max)
1mA

Vce Saturation (Max) @ Ib, Ic
3.5V @ 3A, 30A

Voltage - Collector Emitter Breakdown (Max)
400 V

Current - Collector (Ic) (Max)
20 A

Download datasheets and manufacturer documentation for Harris D64ES5.

D64ES5 Overview

This device has a DC current gain of 100 @ 10A, 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-3.Detection of Collector Emitter Breakdown at 400 V maximal voltage is present.

D64ES5 Features

the DC current gain for this device is 100 @ 10A, 5V
the vce saturation(Max) is 3.5V @ 3A, 30A
the supplier device package of TO-3

D64ES5 Applications

There are a lot of Harris Corporation
D64ES5 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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