TI CSD19535KCS

Manufacturer No:

CSD19535KCS

Manufacturer:

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 3.6m ? @ 100A, 10V ±20V 7930pF @ 50V 101nC @ 10V TO-220-3

Quantity:

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CSD19535KCS information

TI CSD19535KCS technical specifications, attributes, parameters and parts with similar specifications to TI CSD19535KCS.

Type
Parameter

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)

Factory Lead Time
6 Weeks

Contact Plating
Tin

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Weight
6.000006g

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
NexFET?

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Additional Feature
AVALANCHE RATED

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
not_compliant

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Base Part Number
CSD19535

Number of Channels
1

Power Dissipation-Max
300W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
300W

Case Connection
DRAIN

Turn On Delay Time
32 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
3.6m ? @ 100A, 10V

Vgs(th) (Max) @ Id
3.4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
7930pF @ 50V

Current - Continuous Drain (Id) @ 25°C
150A Ta

Gate Charge (Qg) (Max) @ Vgs
101nC @ 10V

Rise Time
15ns

Drive Voltage (Max Rds On,Min Rds On)
6V 10V

Vgs (Max)
±20V

Fall Time (Typ)
5 ns

Turn-Off Delay Time
60 ns

Continuous Drain Current (ID)
150A

Threshold Voltage
2.7V

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.0044Ohm

Download datasheets and manufacturer documentation for TI CSD19535KCS.

CSD19535KCS Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7930pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 400A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 32 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.7V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).

CSD19535KCS Features

a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 400A.
a threshold voltage of 2.7V

CSD19535KCS Applications

There are a lot of Texas Instruments
CSD19535KCS applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

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