TI CSD17313Q2Q1T

Manufacturer No:

CSD17313Q2Q1T

Manufacturer:

Package:

6-WDFN Exposed Pad

Description:

MOSFET (Metal Oxide) N-Channel 30m ? @ 4A, 8V +10V, -8V 340pF @ 15V 2.7nC @ 4.5V 30V 6-WDFN Exposed Pad

Quantity:

In Stock :5910

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Date Code：Within 2 Years

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CSD17313Q2Q1T Information

TI CSD17313Q2Q1T technical specifications, attributes, parameters and parts with similar specifications to TI CSD17313Q2Q1T.

Type
Parameter

Lifecycle Status
NRND (Last Updated: 3 days ago)

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
6-WDFN Exposed Pad

Number of Pins
6

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Series
NexFET?

JESD-609 Code
e3

Pbfree Code
yes

Type
Parameter

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
6

Terminal Finish
Matte Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
NO LEAD

Base Part Number
CSD17313

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Download datasheets and manufacturer documentation for TI CSD17313Q2Q1T.

CSD17313Q2Q1T Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 18 mJ.The maximum input capacitance of this device is 340pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.As shown in the table below, the drain current of this device is 5A.There is no pulsed drain current maximum for this device based on its rated peak drain current 57A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (3V 8V), this device helps reduce its power consumption.

CSD17313Q2Q1T Features

the avalanche energy rating (Eas) is 18 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 57A.
a 30V drain to source voltage (Vdss)