TI CSD16407Q5
TI CSD16407Q5

TI CSD16407Q5

Manufacturer No:

CSD16407Q5

Manufacturer:

TI

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.4m ? @ 25A, 10V +16V, -12V 2660pF @ 12.5V 18nC @ 4.5V 8-PowerTDFN

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In Stock :7669

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Shipped from：HK Warehouse
Expected Shipping：Sat, May 9 - Sun, May 10, 2026
Date Code：Within 2 Years

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Step1：Prepare product

Step1：Prepare product

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Step2：Desiccant Protection

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Step3：Vacuum Packaging

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Step4：Individual Package

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

CSD16407Q5 Information

TI CSD16407Q5 technical specifications, attributes, parameters and parts with similar specifications to TI CSD16407Q5.

  • Type
  • Parameter
  • Lifecycle Status
  • ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
  • 12 Weeks
  • Contact Plating
  • Tin
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • 8-PowerTDFN
  • Number of Pins
  • 8
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Type
  • Parameter
  • Series
  • NexFET?
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 5
  • Termination
  • SMD/SMT
  • ECCN Code
  • EAR99
  • Additional Feature
  • AVALANCHE RATED
  • Subcategory
  • FET General Purpose Power

Download datasheets and manufacturer documentation for TI CSD16407Q5.

Description


The CSD16407Q5 is an N-Channel NexFET? Power MOSFET. In order to reduce losses in power conversion applications, the NexFETTM power MOSFET was created. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.



Features


  • Avalanche Rated

  • SON 5-mm × 6-mm Plastic Package

  • Ultralow Qg and Qgd

  • Low Thermal Resistance

  • Wide Bandwidth



Applications


  • Optimized for Synchronous FET Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems

  • Power Supplies

  • DC-to-DC Converters

  • Low-Voltage Motor Controllers


CSD16407Q5 Relevant information

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