

TI CSD16327Q3
Manufacturer No:
CSD16327Q3
Manufacturer:
Package:
8-PowerTDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4m ? @ 24A, 8V +10V, -8V 1300pF @ 12.5V 8.4nC @ 4.5V 8-PowerTDFN
Quantity:


In Stock :6496
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Step6:Packaging Box
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CSD16327Q3 Information
TI CSD16327Q3 technical specifications, attributes, parameters and parts with similar specifications to TI CSD16327Q3.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time
- 12 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Type
- Parameter
- Series
- NexFET?
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
Download datasheets and manufacturer documentation for TI CSD16327Q3.
CSD16327Q3 Description
CSD16327Q3 is a type of N-channel NexFET? power MOSFET developed based on the established NexFET? technology. It is specially designed to minimize losses in power conversion and optimized for 5V gate drive applications. It is available in the SON package for space-saving. CSD16327Q3 is optimized for control or synchronous FET applications
CSD16327Q3 Features
NexFET? technology
Optimized for 5-V gate drive
Ultralow Qg and Qgd
Low thermal resistance
Available in the SON package
CSD16327Q3 Applications
Point-of-load synchronous buck converter for applications in networking, telecom, and computing systems
Optimized for control or synchronous FET applications
CSD16327Q3 Relevant information
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