Harris BUW41B

Manufacturer No:

BUW41B

Manufacturer:

Harris

Package:

TO-220-3

Description:

NPN -65°C ~ 150°C (TJ) 100?A TO-220-3 Through Hole

Quantity:

Delivery:

Payment:

In Stock :Available

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BUW41B information

Harris BUW41B technical specifications, attributes, parameters and parts with similar specifications to Harris BUW41B.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Supplier Device Package
TO-220AB

Mfr
Harris Corporation

Package
Bulk

Product Status
Active

Operating Temperature
-65°C ~ 150°C (TJ)

Power - Max
100 W

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 5A, 3V

Current - Collector Cutoff (Max)
100?A

Vce Saturation (Max) @ Ib, Ic
2V @ 4A, 8A

Voltage - Collector Emitter Breakdown (Max)
400 V

Current - Collector (Ic) (Max)
8 A

Frequency - Transition
60MHz

Download datasheets and manufacturer documentation for Harris BUW41B.

BUW41B Overview

In this device, the DC current gain is 10 @ 5A, 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 4A, 8A.Supplier device package TO-220AB comes with the product.The device exhibits a collector-emitter breakdown at 400 V.

BUW41B Features

the DC current gain for this device is 10 @ 5A, 3V
the vce saturation(Max) is 2V @ 4A, 8A
the supplier device package of TO-220AB

BUW41B Applications

There are a lot of Harris Corporation
BUW41B applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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DELIVERY TIME

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2. For in-stock parts, orders normally could be shipped out within 1-2days.