NEXPERIA BUK9Y8R7-60E,115

Manufacturer No:

BUK9Y8R7-60E,115

Manufacturer:

NEXPERIA

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7.5m ? @ 20A, 10V ±10V 4570pF @ 25V 31nC @ 5V SC-100, SOT-669

Quantity:

In Stock :Available

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Shipped from：HK Warehouse

Expected Shipping：Mon, Apr 27 - Tue, Apr 28, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BUK9Y8R7-60E,115 Information

NEXPERIA BUK9Y8R7-60E,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK9Y8R7-60E,115.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Surface Mount
YES

Number of Pins
4

Material
Brass, Bronze

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
Automotive, AEC-Q101, TrenchMOS?

Published
2013

Type
Parameter

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

Termination
Crimp

Terminal Finish
Tin (Sn)

Additional Feature
AVALANCHE RATED

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Reach Compliance Code
not_compliant

Download datasheets and manufacturer documentation for NEXPERIA BUK9Y8R7-60E,115.

BUK9Y8R7-60E,115 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 76.5 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4570pF @ 25V.This device has a continuous drain current (ID) of [86A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (5V 10V).