NXP BUK9E6R1-100E,127
Manufacturer No:
BUK9E6R1-100E,127
Manufacturer:
NXP
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 5.9m ? @ 25A, 10V ±10V 17460pF @ 25V 133nC @ 5V 100V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :3871
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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BUK9E6R1-100E,127 Information
NXP BUK9E6R1-100E,127 technical specifications, attributes, parameters and parts with similar specifications to NXP BUK9E6R1-100E,127.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- TrenchMOS?
- Published
- 2012
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- Tin (Sn)
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Reach Compliance Code
- not_compliant
- Pin Count
- 3
- Reference Standard
- AEC-Q101; IEC-60134
Download datasheets and manufacturer documentation for NXP BUK9E6R1-100E,127.
Datasheets:
BUK9E6R1-100E,127 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 387 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 17460pF @ 25V.120A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 576A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (5V 10V) reduces this device's overall power consumption.
BUK9E6R1-100E,127 Features
the avalanche energy rating (Eas) is 387 mJ
based on its rated peak drain current 576A.
a 100V drain to source voltage (Vdss)
BUK9E6R1-100E,127 Applications
There are a lot of NXP USA Inc.
BUK9E6R1-100E,127 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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