NTE Electronics, Inc BU406D
Manufacturer No:
BU406D
Manufacturer:
Package:
TO-220-3
Description:
NPN 150°C (TJ) 15mA TO-220-3 Through Hole
Quantity:


In Stock :3004
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BU406D Information
NTE Electronics, Inc BU406D technical specifications, attributes, parameters and parts with similar specifications to NTE Electronics, Inc BU406D.
- Type
- Parameter
- Package / Case
- TO-220-3
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220
- Mfr
- NTE Electronics, Inc
- Product Status
- Active
- Package
- Bag
- Operating Temperature
- 150°C (TJ)
- Power - Max
- 60 W
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 15 @ 2A, 5V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 15mA
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 650mA, 5A
- Voltage - Collector Emitter Breakdown (Max)
- 200 V
- Current - Collector (Ic) (Max)
- 7 A
- Frequency - Transition
- 10MHz
Download datasheets and manufacturer documentation for NTE Electronics, Inc BU406D.
BU406D Overview
In this device, the DC current gain is 15 @ 2A, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 650mA, 5A.Product comes in the supplier's device package TO-220.There is a 200 V maximal voltage in the device due to collector-emitter breakdown.
BU406D Features
the DC current gain for this device is 15 @ 2A, 5V
the vce saturation(Max) is 1V @ 650mA, 5A
the supplier device package of TO-220
BU406D Applications
There are a lot of NTE Electronics, Inc
BU406D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
BU406D Relevant information
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