INFINEON BSZ0901NSATMA1

Manufacturer No:

BSZ0901NSATMA1

Manufacturer:

INFINEON

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2m ? @ 20A, 10V ±20V 2850pF @ 15V 45nC @ 10V 8-PowerTDFN

Quantity:

In Stock :3866

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 14 - Fri, May 15, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

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Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BSZ0901NSATMA1 Information

INFINEON BSZ0901NSATMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSZ0901NSATMA1.

Type
Parameter

Factory Lead Time
18 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Number of Pins
8

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
OptiMOS?

Published
2013

Type
Parameter

JESD-609 Code
e3

Pbfree Code
no

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin (Sn)

Subcategory
FET General Purpose Powers

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Download datasheets and manufacturer documentation for INFINEON BSZ0901NSATMA1.

BSZ0901NSATMA1 Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 150 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2850pF @ 15V.This device conducts a continuous drain current (ID) of 25A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 22A.When the device is turned off, a turn-off delay time of 27 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 160A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 30V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

BSZ0901NSATMA1 Features

the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 27 ns
based on its rated peak drain current 160A.