INFINEON BSP298L6327

Manufacturer No:

BSP298L6327

Manufacturer:

INFINEON

Package:

Description:

Tape & Reel 400 V

Quantity:

In Stock :1724

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Shipped from：HK Warehouse

Expected Shipping：Mon, May 25 - Tue, May 26, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BSP298L6327 Information

INFINEON BSP298L6327 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSP298L6327.

Type
Parameter

Mount
Surface Mount

Surface Mount
YES

Number of Pins
4

Number of Terminals
4

Transistor Element Material
SILICON

Turn-On Delay Time
10 ns

Voltage Rating (DC)
60 V

RoHS Status
RoHS Compliant

Package Shape
RECTANGULAR

Manufacturer
Infineon Technologies AG

Type
Parameter

Packaging
Tape & Reel

JESD-609 Code
e3

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Max Operating Temperature
150 °C

Min Operating Temperature
-55 °C

Additional Feature
AVALANCHE RATED

HTS Code
8541.29.00.95

Max Power Dissipation
1.8 W

Terminal Position
DUAL

Download datasheets and manufacturer documentation for INFINEON BSP298L6327.

BSP298L6327 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 130 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 500 mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400 V. And this device has 400 V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 3 Ω. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400 V in order to maintain normal operation.Operating this transistor requires a 400 V drain to source voltage (Vdss).

BSP298L6327 Features

the avalanche energy rating (Eas) is 130 mJ
a continuous drain current (ID) of 500 mA
a drain-to-source breakdown voltage of 400 V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 2 A.
single MOSFETs transistor is 3 Ω
a 400 V drain to source voltage (Vdss)