INFINEON BSP298H6327XUSA1
Manufacturer No:
BSP298H6327XUSA1
Manufacturer:
INFINEON
Package:
TO-261-4, TO-261AA
Description:
N-Channel Cut Tape (CT) 3Ohm @ 500mA, 10V ±20V 400pF @ 25V 400V TO-261-4, TO-261AA
Quantity:
In Stock :2593
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
BSP298H6327XUSA1 Information
INFINEON BSP298H6327XUSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSP298H6327XUSA1.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 3
- Supplier Device Package
- PG-SOT223-4
- Current - Continuous Drain (Id) @ 25℃
- 500mA Ta
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Type
- Parameter
- Power Dissipation (Max)
- 1.8W Ta
- Turn Off Delay Time
- 30 ns
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- SIPMOS®
- Published
- 2008
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 3 (168 Hours)
- Termination
- SMD/SMT
- Max Operating Temperature
- 150°C
Download datasheets and manufacturer documentation for INFINEON BSP298H6327XUSA1.
Other Related Documents:
PCN Packaging:
ConflictMineralStatement:
Product Description:
The BSP298H6327XUSA1 is a single N-Channel MOSFET from Infineon Technologies, designed for high-performance applications. This surface-mount transistor features a compact TO-261-4 package, making it ideal for space-constrained designs. With a continuous drain current of 500mA and a drain-to-source breakdown voltage of 400V, this device is capable of handling high-power loads.
Features:
- High-power handling with a drain-to-source breakdown voltage of 400V
- Compact TO-261-4 package for space-constrained designs
- Surface-mount technology for easy integration
- High-speed switching with a fall time of 20ns and a rise time of 25ns
- Low on-resistance of 3Ω for efficient power dissipation
- Operating temperature range of -55°C to 150°C for robust performance
Applications:
- Power switching and control in automotive and industrial applications
- High-power load switching in consumer electronics
- High-speed switching in telecommunications and data communication systems
- Power management in renewable energy systems
Alternative Parts:
- Infineon Technologies BSP298H6327XUSA1
- Other SIPMOS? N-Channel MOSFETs from Infineon Technologies
Embedded Modules:
- None
FAQs:
Q: What is the maximum operating temperature of the BSP298H6327XUSA1? A: The maximum operating temperature is 150°C.
Q: What is the minimum operating temperature of the BSP298H6327XUSA1? A: The minimum operating temperature is -55°C.
Q: What is the maximum drain-to-source voltage of the BSP298H6327XUSA1? A: The maximum drain-to-source voltage is 400V.
Q: What is the maximum on-resistance of the BSP298H6327XUSA1? A: The maximum on-resistance is 3Ω.
Q: What is the package type of the BSP298H6327XUSA1? A: The package type is TO-261-4.
Q: What is the lead-free status of the BSP298H6327XUSA1? A: The BSP298H6327XUSA1 is lead-free.
Q: What is the RoHS status of the BSP298H6327XUSA1? A: The BSP298H6327XUSA1 is RoHS3 compliant.
BSP298H6327XUSA1 Relevant information
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