INFINEON BSP298H6327

Manufacturer No:

BSP298H6327

Manufacturer:

INFINEON

Package:

Description:

Quantity:

In Stock :2278

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Shipped from：HK Warehouse

Expected Shipping：Mon, May 25 - Tue, May 26, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BSP298H6327 Information

INFINEON BSP298H6327 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSP298H6327.

Type
Parameter

Surface Mount
YES

Number of Terminals
4

Transistor Element Material
SILICON

Package Shape
RECTANGULAR

Manufacturer
Infineon Technologies AG

JESD-609 Code
e3

Pbfree Code
Yes

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Additional Feature
AVALANCHE RATED

Type
Parameter

HTS Code
8541.29.00.95

Subcategory
FET General Purpose Power

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Reach Compliance Code
compliant

Pin Count
4

Reference Standard
AEC-Q101

JESD-30 Code
R-PDSO-G4

Number of Elements
1

Download datasheets and manufacturer documentation for INFINEON BSP298H6327.

Product Description:

The BSP298H6327 is a small outline, dual-terminal N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) from Infineon Technologies AG. This device is designed for general-purpose power applications and features a small outline package (SOT-223) with a rectangular shape. The MOSFET is manufactured using metal-oxide-semiconductor technology and is rated for a maximum power dissipation of 1.8 watts.

Features:

Dual-terminal design with a built-in diode
N-channel enhancement mode
Avalanche-rated for reliable operation
Small outline package (SOT-223) with a rectangular shape
Operating temperature range of -40°C to 150°C
Surface mountable with a peak reflow temperature of 260°C
Pb-free and RoHS compliant

Applications:

General-purpose power applications
Switching and amplifying circuits
Power supplies and converters
Automotive and industrial control systems

Alternative Parts:

Other Infineon Technologies AG MOSFETs with similar specifications
MOSFETs from other manufacturers with similar specifications

Embedded Modules:

None

FAQs:

Q: What is the maximum power dissipation of the BSP298H6327? A: The maximum power dissipation is 1.8 watts.

Q: What is the maximum drain current of the BSP298H6327? A: The maximum drain current is 0.5 amps.

Q: Is the BSP298H6327 Pb-free and RoHS compliant? A: Yes, the BSP298H6327 is Pb-free and RoHS compliant.

Q: What is the operating temperature range of the BSP298H6327? A: The operating temperature range is -40°C to 150°C.

Q: Is the BSP298H6327 suitable for automotive applications? A: Yes, the BSP298H6327 is suitable for automotive applications and meets the AEC-Q101 standard.