INFINEON BSP149L6906
Manufacturer No:
BSP149L6906
Manufacturer:
INFINEON
Package:
Description:
200 V
Quantity:
In Stock :9518
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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BSP149L6906 Information
INFINEON BSP149L6906 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSP149L6906.
- Type
- Parameter
- Factory Lead Time
- 1 Week
- Mount
- Surface Mount
- Surface Mount
- YES
- Number of Pins
- 4
- Number of Terminals
- 4
- Transistor Element Material
- SILICON
- Turn-On Delay Time
- 5.1 ns
- Voltage Rating (DC)
- 200 V
- RoHS Status
- RoHS Compliant
- Package Shape
- RECTANGULAR
- Type
- Parameter
- Manufacturer
- Infineon Technologies AG
- JESD-609 Code
- e3
- ECCN Code
- EAR99
- Terminal Finish
- MATTE TIN
- Max Operating Temperature
- 150 °C
- Min Operating Temperature
- -55 °C
- HTS Code
- 8541.29.00.75
- Subcategory
- FET General Purpose Power
- Max Power Dissipation
- 1.8 W
- Terminal Position
- DUAL
Download datasheets and manufacturer documentation for INFINEON BSP149L6906.
BSP149L6906 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 660 mA.When VGS=200 V, and ID flows to VDS at 200 VVDS, the drain-source breakdown voltage is 200 V in this device.As shown in the table below, the drain current of this device is 0.66 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 45 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 2.6 A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.8 Ω.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200 V in order to operate.
BSP149L6906 Features
a continuous drain current (ID) of 660 mA
a drain-to-source breakdown voltage of 200 V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 2.6 A.
single MOSFETs transistor is 1.8 Ω
a 200 V drain to source voltage (Vdss)
BSP149L6906 Applications
There are a lot of Infineon
BSP149L6906 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
