INFINEON BSP125L6433
Manufacturer No:
BSP125L6433
Manufacturer:
INFINEON
Package:
TO-261-4, TO-261AA
Description:
MOSFET (Metal Oxide) N-Channel Tape and Reel 45Ohm @ 120mA, 10V ±20V 150 pF @ 25 V 6.6 nC @ 10 V 60 V TO-261-4, TO-261AA
Quantity:
In Stock :8106
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 14 - Mon, Jun 15, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2. For in-stock parts, orders normally could be shipped out within 1-2days.
BSP125L6433 Information
INFINEON BSP125L6433 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSP125L6433.
- Type
- Parameter
- Mount
- Surface Mount, Through Hole
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Surface Mount
- YES
- Number of Pins
- 4
- Supplier Device Package
- PG-SOT223-4-21
- Number of Terminals
- 4
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 0.12
- Voltage Rating (DC)
- 600 V
- Type
- Parameter
- RoHS Status
- RoHS Compliant
- Package
- Bulk
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mfr
- Infineon Technologies
- Power Dissipation (Max)
- 1.8W (Ta)
- Product Status
- Active
- Package Description
- SMALL OUTLINE, R-PDSO-G4
- Package Style
- SMALL OUTLINE
- Moisture Sensitivity Level
- 1
- Package Body Material
- PLASTIC/EPOXY
Download datasheets and manufacturer documentation for INFINEON BSP125L6433.
BSP125L6433 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 150 pF @ 25 V.This device has a continuous drain current (ID) of [120 mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600 V, the drain-source breakdown voltage is 600 V.A device's drain current is its maximum continuous current, and this device's drain current is 0.12 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.A maximum pulsed drain current of 0.48 A is the maximum peak drain current rated for this device.MOSFETs have 45 Ω resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20 V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 60 V is needed from the drain to the source (Vdss).
BSP125L6433 Features
a continuous drain current (ID) of 120 mA
a drain-to-source breakdown voltage of 600 V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 0.48 A.
single MOSFETs transistor is 45 Ω
a 60 V drain to source voltage (Vdss)
BSP125L6433 Applications
There are a lot of Infineon
BSP125L6433 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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