NEXPERIA BSP122,115
NEXPERIA BSP122,115

NEXPERIA BSP122,115

Manufacturer No:

BSP122,115

Manufacturer:

NEXPERIA

Package:

TO-261-4, TO-261AA

Description:

N-Channel Tape & Reel (TR) 2.5 Ω @ 750mA, 10V ±20V 100pF @ 25V TO-261-4, TO-261AA

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In Stock :2348

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Expected Shipping:Mon, Jun 8 - Tue, Jun 9, 2026
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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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BSP122,115 Information

NEXPERIA BSP122,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BSP122,115.

  • Type
  • Parameter
  • Factory Lead Time
  • 4 Weeks
  • Contact Plating
  • Tin
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Number of Pins
  • 3
  • Weight
  • 4.535924g
  • Transistor Element Material
  • SILICON
  • Current - Continuous Drain (Id) @ 25℃
  • 550mA Ta
  • Drive Voltage (Max Rds On, Min Rds On)
  • 2.4V 10V
  • Type
  • Parameter
  • Number of Elements
  • 1
  • Power Dissipation (Max)
  • 1.5W Ta
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 1996
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 4
  • ECCN Code
  • EAR99

Download datasheets and manufacturer documentation for NEXPERIA BSP122,115.

BSP122,115 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 100pF @ 25V.This device conducts a continuous drain current (ID) of 550mA, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.55A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 200V power, it supports a dual voltage supply of up to maximum.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.

BSP122,115 Features


a continuous drain current (ID) of 550mA
a drain-to-source breakdown voltage of 200V voltage
a threshold voltage of 2V


BSP122,115 Applications


There are a lot of Nexperia USA Inc.
BSP122,115 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching