
Siemens BSM35GD120DN2E3224
Manufacturer No:
BSM35GD120DN2E3224
Manufacturer:
Package:
FLANGE MOUNT, R-XUFM-T17
Description:
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
Quantity:
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In Stock :Available
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BSM35GD120DN2E3224 information
Siemens BSM35GD120DN2E3224 technical specifications, attributes, parameters and parts with similar specifications to Siemens BSM35GD120DN2E3224.
- Type
- Parameter
- Part Life Cycle Code
- Obsolete
- Ihs Manufacturer
- SIEMENS A G
- Package Description
- FLANGE MOUNT, R-XUFM-T17
- Reach Compliance Code
- unknown
- ECCN Code
- EAR99
- HTS Code
- 8541.29.00.95
- Case Connection
- ISOLATED
- Collector Current-Max (IC)
- 50 A
- Collector-Emitter Voltage-Max
- 1200 V
- Configuration
- BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Fall Time-Max (tf)
- 75 ns
- Gate-Emitter Voltage-Max
- 20 V
- JESD-30 Code
- R-XUFM-T17
- Number of Elements
- 6
- Number of Terminals
- 17
- Operating Temperature-Max
- 150 °C
- Package Body Material
- UNSPECIFIED
- Package Shape
- RECTANGULAR
- Package Style
- FLANGE MOUNT
- Polarity/Channel Type
- N-CHANNEL
- Power Dissipation Ambient-Max
- 1680 W
- Qualification Status
- Not Qualified
- Rise Time-Max (tr)
- 120 ns
- Surface Mount
- NO
- Terminal Position
- UPPER
- Transistor Element Material
- SILICON
- Turn-off Time-Max (toff)
- 600 ns
- Turn-off Time-Nom (toff)
- 400 ns
- Turn-on Time-Max (ton)
- 120 ns
- Turn-on Time-Nom (ton)
- 60 ns
- VCEsat-Max
- 3.2 V
Download datasheets and manufacturer documentation for Siemens BSM35GD120DN2E3224.
Datasheets:
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User Guide
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Step1:Prepare product

Step2:Desiccant Protection

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Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
BSM35GD120DN2E3224 Relevant information
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