INFINEON BSC024NE2LSATMA1

Manufacturer No:

BSC024NE2LSATMA1

Manufacturer:

INFINEON

Package:

8-PowerTDFN

Description:

N-Channel Tape & Reel (TR) 2.4m Ω @ 30A, 10V ±20V 1700pF @ 12V 23nC @ 10V 8-PowerTDFN

Quantity:

In Stock :1333

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Shipped from：HK Warehouse

Expected Shipping：Sat, May 9 - Sun, May 10, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BSC024NE2LSATMA1 Information

INFINEON BSC024NE2LSATMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSC024NE2LSATMA1.

Type
Parameter

Factory Lead Time
26 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Number of Pins
8

Transistor Element Material
SILICON

Current - Continuous Drain (Id) @ 25℃
25A Ta 100A Tc

Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V

Number of Elements
1

Power Dissipation (Max)
2.5W Ta 48W Tc

Type
Parameter

Turn Off Delay Time
19 ns

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
OptiMOS™

Published
2011

JESD-609 Code
e3

Pbfree Code
no

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

Download datasheets and manufacturer documentation for INFINEON BSC024NE2LSATMA1.

BSC024NE2LSATMA1 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 40 mJ (Eas).Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1700pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 25A amps.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 4.1 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 25V, it can support the maximum dual supply voltage.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.

BSC024NE2LSATMA1 Features

the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 25A
based on its rated peak drain current 400A.
a threshold voltage of 2V