

INFINEON BSC019N04LSATMA1
Manufacturer No:
BSC019N04LSATMA1
Manufacturer:
Package:
8-PowerTDFN
Description:
N-Channel Tape & Reel (TR) 1.9mOhm @ 50A, 10V ±20V 2900pF @ 20V 41nC @ 10V 40V 8-PowerTDFN
Quantity:


In Stock :5442
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BSC019N04LSATMA1 Information
INFINEON BSC019N04LSATMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSC019N04LSATMA1.
- Type
- Parameter
- Factory Lead Time
- 26 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Number of Pins
- 8
- Supplier Device Package
- PG-TDSON-8-1
- Current - Continuous Drain (Id) @ 25℃
- 27A Ta 100A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V 10V
- Power Dissipation (Max)
- 2.5W Ta 78W Tc
- Operating Temperature
- -55°C~150°C TJ
- Type
- Parameter
- Packaging
- Tape & Reel (TR)
- Series
- OptiMOS™
- Published
- 2012
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 1.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 250μA
Download datasheets and manufacturer documentation for INFINEON BSC019N04LSATMA1.
Datasheets:
Other Related Documents:
PCN Packaging:
ConflictMineralStatement:
BSC019N04LSATMA1 Overview
A device's maximal input capacitance is 2900pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.5mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 40V, it can supply the maximum voltage from two sources.This transistor requires a 40V drain to source voltage (Vdss).
BSC019N04LSATMA1 Features
a continuous drain current (ID) of 100A
single MOSFETs transistor is 1.5mOhm
a 40V drain to source voltage (Vdss)
BSC019N04LSATMA1 Applications
There are a lot of Infineon Technologies
BSC019N04LSATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
BSC019N04LSATMA1 Relevant information
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