INFINEON BSC016N04LS G
Manufacturer No:
BSC016N04LS G
Manufacturer:
Package:
Description:
Quantity:
In Stock :6542
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BSC016N04LS G Information
INFINEON BSC016N04LS G technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSC016N04LS G.
- Type
- Parameter
- Surface Mount
- YES
- Number of Terminals
- 5
- Transistor Element Material
- SILICON
- Number of Elements
- 1
- Operating Temperature (Max.)
- 150°C
- JESD-609 Code
- e3
- Pbfree Code
- icon-pbfree no
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Type
- Parameter
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 8
- JESD-30 Code
- R-PDSO-F5
- Qualification Status
- Not Qualified
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for INFINEON BSC016N04LS G.
Product Description:
The Infineon Technologies AG BSC016N04LS G is a high-performance N-channel enhancement mode power MOSFET designed for switching applications. This single-channel MOSFET features a built-in diode and is packaged in a flat, dual-terminal form with a tin (Sn) finish. The device operates in enhancement mode and is suitable for use in a wide range of applications, including power supplies, motor control, and audio equipment.
Features:
- High current handling: up to 100A absolute maximum drain current
- Low on-resistance: 0.0023 Ohms maximum drain-source on resistance
- High avalanche energy rating: 295 mJ
- Operating temperature range: -40°C to 150°C
- RoHS compliant and Pb-free
- Surface mount compatible with a flat, dual-terminal form factor
Applications:
- Primary applications:
- Power supplies
- Motor control systems
- Audio equipment
- Secondary applications:
- Lighting control systems
- HVAC systems
- Industrial automation
Alternative Parts:
- BSC016N04LS G is an alternative to other high-power MOSFETs, such as the STP16NF06L or the IRF640.
Embedded Modules:
- This component is used in various embedded systems, including:
- Power supply modules
- Motor control modules
- Audio processing modules
FAQs:
Q: What is the maximum drain current of the BSC016N04LS G? A: The maximum drain current is 100A absolute maximum.
Q: What is the on-resistance of the device? A: The on-resistance is 0.0023 Ohms maximum.
Q: Is the device RoHS compliant? A: Yes, the BSC016N04LS G is RoHS compliant.
Q: What is the operating temperature range of the device? A: The operating temperature range is -40°C to 150°C.
Q: Is the device suitable for use in power supplies? A: Yes, the device is suitable for use in power supplies due to its high current handling and low on-resistance.
Q: What is the avalanche energy rating of the device? A: The avalanche energy rating is 295 mJ.
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