INFINEON BSC014NE2LSIATMA1

Manufacturer No:

BSC014NE2LSIATMA1

Manufacturer:

INFINEON

Package:

8-PowerTDFN

Description:

N-Channel Tape & Reel (TR) 1.4m Ω @ 30A, 10V ±20V 2700pF @ 12V 39nC @ 10V 8-PowerTDFN

Quantity:

In Stock :4384

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 10 - Mon, May 11, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BSC014NE2LSIATMA1 Information

INFINEON BSC014NE2LSIATMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSC014NE2LSIATMA1.

Type
Parameter

Factory Lead Time
26 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Number of Pins
8

Transistor Element Material
SILICON

Current - Continuous Drain (Id) @ 25℃
33A Ta 100A Tc

Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V

Number of Elements
1

Power Dissipation (Max)
2.5W Ta 74W Tc

Type
Parameter

Turn Off Delay Time
25 ns

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
OptiMOS™

Published
2012

JESD-609 Code
e3

Pbfree Code
no

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

Download datasheets and manufacturer documentation for INFINEON BSC014NE2LSIATMA1.

Product Description:

The Infineon Technologies BSC014NE2LSIATMA1 is an N-channel enhancement mode power MOSFET designed for high-frequency switching applications. This single-channel MOSFET features a built-in diode and is packaged in an 8-pin PowerTDFN package. The device is designed to operate in a wide temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W.

Features:

High Current Handling: The BSC014NE2LSIATMA1 can handle continuous drain currents of up to 33A at 25°C and 100A at 100°C.
Low On-Resistance: The device has a maximum drain-source on-resistance of 0.002Ω, making it suitable for high-frequency switching applications.
Fast Switching Times: The MOSFET has a fall time of 3.6 ns and a turn-on delay time of 5 ns, allowing for fast switching and reduced switching losses.
High Avalanche Energy Rating: The device has an avalanche energy rating of 50 mJ, making it suitable for applications where high energy pulses are present.

Applications:

Primary Applications: The BSC014NE2LSIATMA1 is suitable for high-frequency switching applications such as DC-DC converters, motor drives, and power supplies.
Secondary Applications: The device can also be used in other applications such as audio amplifiers, LED drivers, and solar inverters.

Alternative Parts:

BSC014NE2LSIATMA1: This is the primary part number for the device.
BSC014NE2LSIATMA2: This is an alternative part number for the device with a different packaging option.

Embedded Modules:

DC-DC Converters: The BSC014NE2LSIATMA1 can be used in DC-DC converters for power supply applications.
Motor Drives: The device can be used in motor drives for applications such as industrial automation and robotics.
Power Supplies: The MOSFET can be used in power supplies for applications such as data centers and telecommunications.

FAQs:

Q: What is the maximum power dissipation of the BSC014NE2LSIATMA1? A: The maximum power dissipation of the device is 2.5W.

Q: What is the maximum continuous drain current of the device? A: The maximum continuous drain current of the device is 33A at 25°C and 100A at 100°C.

Q: What is the operating temperature range of the device? A: The operating temperature range of the device is -55°C to 150°C.

Q: Is the device RoHS compliant? A: Yes, the device is RoHS3 compliant.

Q: What is the packaging option for the device? A: The device is packaged in an 8-pin PowerTDFN package with a tape and reel option.

Q: Is the device suitable for high-frequency switching applications? A: Yes, the device is designed for high-frequency switching applications and has a maximum drain-source on-resistance of 0.002Ω.