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Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
BLF246B112 Information
NXP BLF246B112 technical specifications, attributes, parameters and parts with similar specifications to NXP BLF246B112.
- Type
- Parameter
- Mount
- Screw
- Number of Pins
- 8
- RoHS Status
- RoHS Compliant
- Max Operating Temperature
- 200 °C
- Min Operating Temperature
- -65 °C
- Max Power Dissipation
- 130 W
- Current Rating
- 8 A
- Frequency
- 175 MHz
- Number of Elements
- 2
- Element Configuration
- Dual
- Type
- Parameter
- Power Dissipation
- 130 W
- Output Power
- 60 W
- Test Current
- 50 mA
- Drain to Source Voltage (Vdss)
- 65 V
- Continuous Drain Current (ID)
- 8 A
- Gate to Source Voltage (Vgs)
- 20 V
- Gain
- 19 dB
- Max Frequency
- 175 MHz
- Max Output Power
- 60 W
- Drain to Source Breakdown Voltage
- 65 V
Download datasheets and manufacturer documentation for NXP BLF246B112.
BLF246B112 Overview
This device conducts a continuous drain current (ID) of 8 A, which is the maximum continuous current transistor can conduct.Using VGS=65 V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 65 V (that is, no charge flow from drain to source).When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 750 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20 V.This transistor requires a drain-source voltage (Vdss) of 65 V.
BLF246B112 Features
a continuous drain current (ID) of 8 A
a drain-to-source breakdown voltage of 65 V voltage
single MOSFETs transistor is 750 mΩ
a 65 V drain to source voltage (Vdss)
BLF246B112 Applications
There are a lot of NXP USA Inc.
BLF246B112 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
