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INFINEON BFS17WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BFS17WH6327XTSA1.
Download datasheets and manufacturer documentation for INFINEON BFS17WH6327XTSA1.
Product Description
The BFS17WH6327XTSA1 is a surface-mount NPN bipolar junction transistor (BJT) from Infineon Technologies, designed for high-frequency amplifier applications. This transistor features a silicon-based construction and operates within a temperature range of 150°C. With a transition frequency of 2500MHz, it is suitable for use in RF amplifier circuits.
Features
Applications
Alternative parts
Embedded modules
FAQs
Q: What is the transition frequency of the BFS17WH6327XTSA1 transistor? A: The transition frequency of the BFS17WH6327XTSA1 transistor is 2500MHz.
Q: What is the noise figure of the BFS17WH6327XTSA1 transistor? A: The noise figure of the BFS17WH6327XTSA1 transistor is 3.5dB to 5dB at 800MHz.
Q: What is the maximum power dissipation of the BFS17WH6327XTSA1 transistor? A: The maximum power dissipation of the BFS17WH6327XTSA1 transistor is 280mW.
Q: What is the packaging option for the BFS17WH6327XTSA1 transistor? A: The BFS17WH6327XTSA1 transistor is available in a surface-mount SC-70 or SOT-323 package.
Q: Is the BFS17WH6327XTSA1 transistor RoHS compliant? A: Yes, the BFS17WH6327XTSA1 transistor is RoHS3 compliant.
Q: Is the BFS17WH6327XTSA1 transistor radiation hardened? A: No, the BFS17WH6327XTSA1 transistor is not radiation hardened.
Q: What is the operating temperature range of the BFS17WH6327XTSA1 transistor? A: The operating temperature range of the BFS17WH6327XTSA1 transistor is 150°C.
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