

NXP BFR30,235
Manufacturer No:
BFR30,235
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
Trans JFET N-CH 25V 10mA 3-Pin TO-236AB T/R
Quantity:


In Stock :3729
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BFR30,235 Information
NXP BFR30,235 technical specifications, attributes, parameters and parts with similar specifications to NXP BFR30,235.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1997
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- BFR30
- Pin Count
- 3
- Type
- Parameter
- Power - Max
- 250mW
- FET Type
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds
- 4pF @ 10V
- Drain to Source Voltage (Vdss)
- 25V
- Source Url Status Check Date
- 2013-06-14 00:00:00
- Current - Drain (Idss) @ Vds (Vgs=0)
- 4mA @ 10V
- Voltage - Cutoff (VGS off) @ Id
- 5V @ 0.5nA
- Current Drain (Id) - Max
- 10mA
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for NXP BFR30,235.
Datasheets:
BFR30,235 Description
BFR30,235 is a ±25V Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. The NXP BFR30,235 can be applied in Low-level general-purpose amplifiers in thick and thin-film circuits. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor BFR30,235 is in the SOT23 package with 250mW power dissipation.
BFR30,235 Features
drain-source voltage: ±25V
gate-source voltage: -25V
drain current: 10mA
forward gate current (DC): 5mA
storage temperature: -65~150℃
BFR30,235 Applications
Automotive
Advanced driver assistance systems (ADAS)
Industrial
Building automation
Enterprise systems
Enterprise projectors
BFR30,235 Relevant information
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