

ONSEMI BD682T
Manufacturer No:
BD682T
Manufacturer:
Package:
TO-225AA, TO-126-3
Description:
PNP - Darlington -55°C~150°C TJ 500?A 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
Quantity:
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BD682T information
ONSEMI BD682T technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BD682T.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-225AA, TO-126-3
- Surface Mount
- NO
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2008
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -100V
- Max Power Dissipation
- 40W
- Peak Reflow Temperature (Cel)
- 240
- Reach Compliance Code
- not_compliant
- Current Rating
- -4A
- Time@Peak Reflow Temperature-Max (s)
- 30
- Base Part Number
- BD682
- Pin Count
- 3
- Qualification Status
- Not Qualified
- Polarity
- PNP
- Element Configuration
- Single
- Power Dissipation
- 40W
- Transistor Application
- AMPLIFIER
- Transistor Type
- PNP - Darlington
- Collector Emitter Voltage (VCEO)
- 100V
- Max Collector Current
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 750 @ 1.5A 3V
- Current - Collector Cutoff (Max)
- 500?A
- Vce Saturation (Max) @ Ib, Ic
- 2.5V @ 30mA, 1.5A
- Collector Emitter Breakdown Voltage
- 100V
- Transition Frequency
- 10MHz
- Collector Base Voltage (VCBO)
- 100V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 750
- Continuous Collector Current
- 4A
- RoHS Status
- RoHS Compliant
- Lead Free
- Contains Lead
Download datasheets and manufacturer documentation for ONSEMI BD682T.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
BD682T Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.When VCE saturation is 2.5V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 10MHz.A maximum collector current of 4A volts can be achieved.
BD682T Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD682T Applications
There are a lot of ON Semiconductor
BD682T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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