ONSEMI BD37910STU
Manufacturer No:
BD37910STU
Manufacturer:
Package:
TO-225AA, TO-126-3
Description:
NPN 150°C TJ 2?A ICBO TO-225AA, TO-126-3 Tube Through Hole
Quantity:
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BD37910STU Information
ONSEMI BD37910STU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BD37910STU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-225AA, TO-126-3
- Supplier Device Package
- TO-126-3
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- BD379
- Power - Max
- 25W
- Transistor Type
- NPN
- Type
- Parameter
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 63 @ 150mA 2V
- Current - Collector Cutoff (Max)
- 2?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)
- 80V
- Current - Collector (Ic) (Max)
- 2A
Download datasheets and manufacturer documentation for ONSEMI BD37910STU.
Datasheets:
BD37910STU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 1V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-126-3 contains the product.The device has a 80V maximal voltage - Collector Emitter Breakdown.
BD37910STU Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of TO-126-3
BD37910STU Applications
There are a lot of ON Semiconductor
BD37910STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
BD37910STU Relevant information
The following parts are popular search parts in Integrated Circuits (ICs).
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