ONSEMI BD238S
Manufacturer No:
BD238S
Manufacturer:
Package:
TO-225AA, TO-126-3
Description:
PNP 150°C TJ 100?A ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
Quantity:
Delivery:




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In Stock :Available
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BD238S information
ONSEMI BD238S technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BD238S.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-225AA, TO-126-3
- Number of Pins
- 3
- Weight
- 761mg
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -80V
- Max Power Dissipation
- 25W
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Current Rating
- -2A
- Frequency
- 3MHz
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- BD238
- Qualification Status
- Not Qualified
- Element Configuration
- Single
- Power Dissipation
- 25W
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 3MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 80V
- Max Collector Current
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 25 @ 1A 2V
- Current - Collector Cutoff (Max)
- 100?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage
- 80V
- Transition Frequency
- 3MHz
- Collector Base Voltage (VCBO)
- -100V
- Emitter Base Voltage (VEBO)
- -5V
- hFE Min
- 25
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for ONSEMI BD238S.
Datasheets:
ReachStatement:
BD238S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
BD238S Features
the DC current gain for this device is 25 @ 1A 2V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 3MHz
BD238S Applications
There are a lot of ON Semiconductor
BD238S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
BD238S Relevant information
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