Rochester BD233STU

Manufacturer No:

BD233STU

Manufacturer:

Rochester

Package:

TO-225AA, TO-126-3

Description:

NPN 150°C TJ 100?A ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

Quantity:

In Stock :6063

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BD233STU Information

Rochester BD233STU technical specifications, attributes, parameters and parts with similar specifications to Rochester BD233STU.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-225AA, TO-126-3

Surface Mount
NO

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tube

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
3

Terminal Finish
MATTE TIN

Terminal Position
SINGLE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
unknown

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

JESD-30 Code
R-PSFM-T3

Qualification Status
COMMERCIAL

Number of Elements
1

Configuration
SINGLE

Download datasheets and manufacturer documentation for Rochester BD233STU.

Datasheets:

rochesterelectronicsllc-bd233stu-datasheets-7568.pdf

rochesterelectronicsllc-bd140-datasheets-1996.pdf

BD233STU Overview

In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.