NEXPERIA BCV71,215
NEXPERIA BCV71,215

NEXPERIA BCV71,215

Manufacturer No:

BCV71,215

Manufacturer:

NEXPERIA

Package:

TO-236-3, SC-59, SOT-23-3

Description:

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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BCV71,215 information

NEXPERIA BCV71,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BCV71,215.

  • Type
  • Parameter
  • Factory Lead Time
  • 4 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-236-3, SC-59, SOT-23-3
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • Automotive, AEC-Q101
  • Published
  • 2009
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin (Sn)
  • Max Power Dissipation
  • 250mW
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Frequency
  • 100MHz
  • Time@Peak Reflow Temperature-Max (s)
  • 40
  • Base Part Number
  • BCV71
  • Pin Count
  • 3
  • Element Configuration
  • Single
  • Power Dissipation
  • 250mW
  • Transistor Application
  • SWITCHING
  • Gain Bandwidth Product
  • 100MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 60V
  • Max Collector Current
  • 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 110 @ 2mA 5V
  • Current - Collector Cutoff (Max)
  • 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 210mV @ 2.5mA, 50mA
  • Collector Emitter Breakdown Voltage
  • 60V
  • Transition Frequency
  • 100MHz
  • Max Breakdown Voltage
  • 60V
  • Collector Base Voltage (VCBO)
  • 80V
  • Emitter Base Voltage (VEBO)
  • 5V
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for NEXPERIA BCV71,215.

Datasheets:

PCN Design/Specification:

PCN Packaging:

RohsStatement:

BCV71,215 Overview


In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 210mV @ 2.5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BCV71,215 Features


the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BCV71,215 Applications


There are a lot of Nexperia USA Inc.
BCV71,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1：Prepare product

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Step2：Desiccant Protection

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Step3：Vacuum Packaging

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Step4：Individual Package

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Step5：Anti-collision Filling

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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