

DIODES BCP52TA
Manufacturer No:
BCP52TA
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
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BCP52TA information
DIODES BCP52TA technical specifications, attributes, parameters and parts with similar specifications to DIODES BCP52TA.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 4
- Weight
- 7.994566mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -65°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Additional Feature
- HIGH RELIABILITY
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -60V
- Max Power Dissipation
- 2W
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 150MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- BCP52
- Qualification Status
- Not Qualified
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 2W
- Case Connection
- COLLECTOR
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 125MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 60V
- Max Collector Current
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 150mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage
- 60V
- Transition Frequency
- 150MHz
- Collector Emitter Saturation Voltage
- -500mV
- Max Breakdown Voltage
- 60V
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 5V
Download datasheets and manufacturer documentation for DIODES BCP52TA.
Datasheets:
Environmental Information:
PCN Assembly/Origin:
BCP52TA Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.
BCP52TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCP52TA Applications
There are a lot of Diodes Incorporated
BCP52TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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