

NEXPERIA BC858W,115
Manufacturer No:
BC858W,115
Manufacturer:
Package:
SC-70, SOT-323
Description:
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
Quantity:
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BC858W,115 information
NEXPERIA BC858W,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BC858W,115.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101
- Published
- 2009
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Max Power Dissipation
- 200mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 100MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- BC858
- Pin Count
- 3
- Element Configuration
- Single
- Power Dissipation
- 200mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 100MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 30V
- Max Collector Current
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 125 @ 2mA 5V
- Current - Collector Cutoff (Max)
- 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage
- 30V
- Transition Frequency
- 100MHz
- Max Breakdown Voltage
- 30V
- Collector Base Voltage (VCBO)
- 30V
- Emitter Base Voltage (VEBO)
- 5V
- Collector-Base Capacitance-Max
- 5pF
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for NEXPERIA BC858W,115.
Datasheets:
PCN Packaging:
ReachStatement:
BC858W,115 Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC858W,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC858W,115 Applications
There are a lot of Nexperia USA Inc.
BC858W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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