Taiwan Semiconductor BC858A RFG
Manufacturer No:
BC858A RFG
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
PNP -55°C~150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Quantity:


In Stock :3321
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BC858A RFG Information
Taiwan Semiconductor BC858A RFG technical specifications, attributes, parameters and parts with similar specifications to Taiwan Semiconductor BC858A RFG.
- Type
- Parameter
- Factory Lead Time
- 24 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SOT-23
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Power - Max
- 200mW
- Transistor Type
- PNP
- Type
- Parameter
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 125 @ 2mA 5V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 30V
- Current - Collector (Ic) (Max)
- 100mA
- Frequency - Transition
- 100MHz
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Taiwan Semiconductor BC858A RFG.
Environmental Information:
BC858A RFG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC858A RFG Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of SOT-23
BC858A RFG Applications
There are a lot of Taiwan Semiconductor Corporation
BC858A RFG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
BC858A RFG Relevant information
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