ONSEMI BC849BLT3
Manufacturer No:
BC849BLT3
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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BC849BLT3 information
ONSEMI BC849BLT3 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BC849BLT3.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- 30V
- Max Power Dissipation
- 300mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 240
- Reach Compliance Code
- not_compliant
- Current Rating
- 100mA
- Time@Peak Reflow Temperature-Max (s)
- 30
- Pin Count
- 3
- JESD-30 Code
- R-PDSO-G3
- Number of Elements
- 1
- Element Configuration
- Single
- Gain Bandwidth Product
- 100MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 600mV
- Max Collector Current
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA 5V
- Current - Collector Cutoff (Max)
- 15nA ICBO
- JEDEC-95 Code
- TO-236AB
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage
- 30V
- Transition Frequency
- 100MHz
- Collector Emitter Saturation Voltage
- 600mV
- Collector Base Voltage (VCBO)
- 30V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 200
- RoHS Status
- RoHS Compliant
- Lead Free
- Contains Lead
Download datasheets and manufacturer documentation for ONSEMI BC849BLT3.
Datasheets:
PCN Obsolescence/ EOL:
PCN Design/Specification:
ReachStatement:
BC849BLT3 Overview
The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC849BLT3 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC849BLT3 Applications
There are a lot of ON Semiconductor
BC849BLT3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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