ONSEMI BC817-40LT3
Manufacturer No:
BC817-40LT3
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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BC817-40LT3 information
ONSEMI BC817-40LT3 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BC817-40LT3.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- HTS Code
- 8541.21.00.95
- Subcategory
- Other Transistors
- Max Power Dissipation
- 300mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 240
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- 30
- Base Part Number
- BC817
- Pin Count
- 3
- JESD-30 Code
- R-PDSO-G3
- Number of Elements
- 1
- Element Configuration
- Single
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 100MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 700mV
- Max Collector Current
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 250 @ 100mA 1V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- JEDEC-95 Code
- TO-236AB
- Vce Saturation (Max) @ Ib, Ic
- 700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage
- 45V
- Current - Collector (Ic) (Max)
- 500mA
- Transition Frequency
- 100MHz
- Collector Emitter Saturation Voltage
- 700mV
- Collector Base Voltage (VCBO)
- 50V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 250
- RoHS Status
- RoHS Compliant
- Lead Free
- Contains Lead
Download datasheets and manufacturer documentation for ONSEMI BC817-40LT3.
Datasheets:
PCN Obsolescence/ EOL:
PCN Design/Specification:
ReachStatement:
BC817-40LT3 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BC817-40LT3 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40LT3 Applications
There are a lot of ON Semiconductor
BC817-40LT3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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