ONSEMI BC817-40LT3

Manufacturer No:

BC817-40LT3

Manufacturer:

ONSEMI

Package:

TO-236-3, SC-59, SOT-23-3

Description:

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Quantity:

In Stock :2728

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 15 - Sat, May 16, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BC817-40LT3 Information

ONSEMI BC817-40LT3 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BC817-40LT3.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2004

JESD-609 Code
e0

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Lead (Sn/Pb)

HTS Code
8541.21.00.95

Subcategory
Other Transistors

Max Power Dissipation
300mW

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
240

Reach Compliance Code
not_compliant

Download datasheets and manufacturer documentation for ONSEMI BC817-40LT3.

BC817-40LT3 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BC817-40LT3 Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz