

ONSEMI BC638ZL1G
Manufacturer No:
BC638ZL1G
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
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BC638ZL1G information
ONSEMI BC638ZL1G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BC638ZL1G.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Box (TB)
- Published
- 2005
- JESD-609 Code
- e1
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature
- EUROPEAN PART NUMBER
- HTS Code
- 8541.21.00.75
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -60V
- Max Power Dissipation
- 625mW
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- -500mA
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- BC638
- Pin Count
- 3
- Qualification Status
- Not Qualified
- Number of Elements
- 1
- Element Configuration
- Single
- Gain Bandwidth Product
- 150MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 500mV
- Max Collector Current
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 150mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage
- 60V
- Current - Collector (Ic) (Max)
- 500mA
- Transition Frequency
- 150MHz
- Collector Emitter Saturation Voltage
- -500mV
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 25
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for ONSEMI BC638ZL1G.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
BC638ZL1G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).150MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
BC638ZL1G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 150MHz
BC638ZL1G Applications
There are a lot of ON Semiconductor
BC638ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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