

ONSEMI BC638G
Manufacturer No:
BC638G
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
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BC638G information
ONSEMI BC638G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BC638G.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Published
- 2005
- JESD-609 Code
- e1
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Silver/Copper (Sn/Ag/Cu)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -60V
- Max Power Dissipation
- 625mW
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- -500mA
- Frequency
- 150MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- BC638
- Pin Count
- 3
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 625mW
- Gain Bandwidth Product
- 150MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 500mV
- Max Collector Current
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 150mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage
- 60V
- Transition Frequency
- 150MHz
- Collector Emitter Saturation Voltage
- -500mV
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 25
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for ONSEMI BC638G.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
BC638G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC638G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 150MHz
BC638G Applications
There are a lot of ON Semiconductor
BC638G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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