NXP BC327-40,112

Manufacturer No:

BC327-40,112

Manufacturer:

NXP

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

PNP 150°C TJ 100nA ICBO 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

Quantity:

In Stock :1369

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BC327-40,112 Information

NXP BC327-40,112 technical specifications, attributes, parameters and parts with similar specifications to NXP BC327-40,112.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA)

Surface Mount
NO

Transistor Element Material
SILICON

Current-Collector (Ic) (Max)
500mA

Number of Elements
1

Operating Temperature
150°C TJ

Packaging
Bulk

Published
2009

JESD-609 Code
e3

Type
Parameter

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
TIN

HTS Code
8541.21.00.95

Terminal Position
BOTTOM

Terminal Form
WIRE

Peak Reflow Temperature (Cel)
250

Time@Peak Reflow Temperature-Max (s)
40

Download datasheets and manufacturer documentation for NXP BC327-40,112.

Datasheets:

nxpusainc-bc327412-datasheets-1067.pdf

BC327-40,112 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.