ONSEMI BC214L_D26Z

Manufacturer No:

BC214L_D26Z

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

PNP -55°C~150°C TJ 15nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

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BC214L_D26Z information

ONSEMI BC214L_D26Z technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BC214L_D26Z.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package
TO-92-3

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Base Part Number
BC214

Power - Max
625mW

Transistor Type
PNP

DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 2mA 5V

Current - Collector Cutoff (Max)
15nA ICBO

Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max)
30V

Current - Collector (Ic) (Max)
500mA

Frequency - Transition
200MHz

Download datasheets and manufacturer documentation for ONSEMI BC214L_D26Z.

Datasheets:

onsemiconductor-bc214ll34z-datasheets-6550.pdf

BC214L_D26Z Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BC214L_D26Z Features

the DC current gain for this device is 140 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3

BC214L_D26Z Applications

There are a lot of ON Semiconductor
BC214L_D26Z applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

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