ONSEMI BC214L_D26Z
Manufacturer No:
BC214L_D26Z
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
PNP -55°C~150°C TJ 15nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
Quantity:
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BC214L_D26Z Information
ONSEMI BC214L_D26Z technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BC214L_D26Z.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package
- TO-92-3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- BC214
- Power - Max
- 625mW
- Transistor Type
- PNP
- Type
- Parameter
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 140 @ 2mA 5V
- Current - Collector Cutoff (Max)
- 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 30V
- Current - Collector (Ic) (Max)
- 500mA
- Frequency - Transition
- 200MHz
Download datasheets and manufacturer documentation for ONSEMI BC214L_D26Z.
Datasheets:
BC214L_D26Z Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC214L_D26Z Features
the DC current gain for this device is 140 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3
BC214L_D26Z Applications
There are a lot of ON Semiconductor
BC214L_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
BC214L_D26Z Relevant information
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