Microchip AT25160B-MAPDGV-T
Manufacturer No:
AT25160B-MAPDGV-T
Manufacturer:
Microchip
Package:
8-UFDFN Exposed Pad
Description:
16Kb, 1.8V SPI Serial EEPROM
Quantity:
In Stock :8120
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 13 - Sun, Jun 14, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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SHIPPING COST
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2. Some specific products need to reach the minimum order quantity.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
AT25160B-MAPDGV-T Information
Microchip AT25160B-MAPDGV-T technical specifications, attributes, parameters and parts with similar specifications to Microchip AT25160B-MAPDGV-T.
- Type
- Parameter
- Battery Backup
- No
- Bus Modes
- SPI
- Density
- 16 Kbit
- Endurance
- 1,000,000
- Max. Clock Freq.
- 20 MHz
- Operating Voltage Max (V)
- 5.5
- Operating Voltage Min (V)
- 1.8
- Page Size (Bytes)
- 32
- Write Protect Scheme
- Quarter, Half, Whole Array
- Write Protected
- No
- Type
- Parameter
- Data Retention
- 0
Download datasheets and manufacturer documentation for Microchip AT25160B-MAPDGV-T.
Application Notes:
The Microchip AT25160B is a 16 Kb Serial EEPROM utilizing the
industry standard Serial Peripheral Interface (SPI) compatible serial bus. The
device is organized as one block of 2048 x 8-bit and is optimized for use in consumer electronics, industrial, medical,
and automotive applications where reliable and dependable nonvolatile memory
storage is essential. Software write protection allows the user to protect ¼,
½, or the entire memory array. A hardware write protect pin is also provided,
which additionally protects against inadvertent writes to the status register.
The EEPROM is available in a variety of space-saving packaging options.
- 2048 x 8-bit (16 Kbit)
- Supports SPI modes 0 and 3
- Up to 20 MHz clock frequency
- Self-Timed Erase and Write Cycles (5 ms max.)
- Read current: 6 mA (Max) at 5 MHz
- Write current: 6 mA (Max) at 5 MHz
- Standby current: 6 μA (Max) at 1.8V, 10 μA (Max) at 5 V
- Block Write Protection: Protect 1/4, 1/2 or Entire Array
- More than 1 million erase/write cycles
- Data retention 100 years
- Automotive Grade 1: -40°C to 125°C
- Automotive Grade 2: -40°C to 105°C
- Automotive Grade 3 / Industrial: -40°C to 85°C
- Automotive AECQ-100 Qualified1
- Factory Programming Available
- Available in standard packages including 8-lead SOIC, and advanced packages including 8-lead TSSOP, 8-lead 2x3 DFN, 8-ball VFBGA and 8-ball wLCSP
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