Comchip Technology ASS8050-H-HF
Manufacturer No:
ASS8050-H-HF
Manufacturer:
Comchip Technology
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN 150°C (TJ) 100nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount
Quantity:
In Stock :2798
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Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
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Date Code：Within 2 Years
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ASS8050-H-HF Information
Comchip Technology ASS8050-H-HF technical specifications, attributes, parameters and parts with similar specifications to Comchip Technology ASS8050-H-HF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SOT-23-3
- Mfr
- Comchip Technology
- Package
- Tape & Reel (TR)
- Product Status
- Active
- Base Product Number
- ASS8050
- Operating Temperature
- 150°C (TJ)
- Power - Max
- 300 mW
- Transistor Type
- NPN
- Type
- Parameter
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 100mA, 1V
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 80mA, 800mA
- Voltage - Collector Emitter Breakdown (Max)
- 25 V
- Current - Collector (Ic) (Max)
- 1.5 A
- Frequency - Transition
- 100MHz
Download datasheets and manufacturer documentation for Comchip Technology ASS8050-H-HF.
ASS8050-H-HF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA, 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.This product comes in a SOT-23-3 device package from the supplier.Device displays Collector Emitter Breakdown (25 V maximal voltage).
ASS8050-H-HF Features
the DC current gain for this device is 200 @ 100mA, 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
the supplier device package of SOT-23-3
ASS8050-H-HF Applications
There are a lot of Comchip Technology
ASS8050-H-HF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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